The Laboratory of Raman Spectrocopy and Photoluminescence is focused on the study of the optical properties of semiconductor materials. Among others, we have carried out Raman scattering studies on a variety of III-V compound systems such as GaN, InN, InGaN, InAs/GaAs, InGaAs, InP, AlGaSb, InAsSb, GaSb, GaAsN, as well as on ZnO, a II-VI wide band gap material which is intensively being investigated because of its potential applications in transparent electronics and in blue and UV light emitters.
Facilities
The laboratory is equipped with:
Jobin-Yvon T64000 triple Raman spectrometer with capabilities for PL and PLE measurements:
- 640 mm focal length: 0.7 cm-1spectral resolution
- CCD detector: high-sensitivity, low noise detector
- Confocal micro-Raman setup: lateral resolution about 1 um
- Cryostat: for low temperature measurements in macrocamera configuration
- Freeze-drying cryostage: for micro-Raman measurements to be carried out from liquid nitrogen temperature up to 600 oC
Horiba Jobin-Yvon FHR1000 single spectrometer dedicated for PL measurements:
- 1000 mm focal length
- CCD detector: high-sensitivity, low noise detector
- InGaAs detector for NIR detection
High-pressure set-up:
- Diamond anvil cell
- Microdriller
Excitation sources:
- Ar+ laser: 25 W (9W in UV)
- Dye laser
- Ti:sapphire laser
- He-Cd laser: 50 mW
- He-Ne laser: 30 mW